Typical Electrical And Thermal Characteristics
5
150
4
I D = -0.25A
V DS = 5V
10V
15V
100
Cis s
50
3
C oss
2
20
1
10
f = 1 MHz
C rss
V GS = 0 V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
5
Q g , GATE CHARGE (nC)
0.1
0.3
-V
0.5 1 5
, DRAIN TO SOURCE VOLTAGE (V)
DS
10
15
25
Figure 7. Gate Charge Characteristics.
2
5
Figure 8. Capacitance Characteristics .
N)
(O
RD
LIM
1m
10
s
0m
θ J A
1
0.3
S
IT
1s
10
s
m
s
4
3
R
SINGLE PULSE
=See note 1a
T A = 25°C
0.1
2
V GS = -4.5V
T A = 25°C
0.03
SINGLE PULSE
R θ JA = See Note 1a
A
1
0.01
0.1
0.2
0.5
1
2
5
10
20
40
0
0.01
0.1
1
10
100
300
- V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
D = 0.5
R θ JA (t) = r(t) * R θ JA
0.2
0.1
0.2
0.1
P(pk)
R θ JA = See Note 1b
0.05
0.05
0.02
t 1
t 2
0.02
0.01
0.01
Single Pulse
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t 2
0.0001
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve .
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
FDC6304P Rev.D
相关PDF资料
FDC6305N MOSFET N-CHAN DUAL 20V SSOT6
FDC6306P MOSFET P-CHAN DUAL 20V SSOT6
FDC6310P MOSFET P-CH DUAL 20V SSOT-6
FDC6312P MOSFET P-CH DUAL 20V SSOT-6
FDC6318P MOSFET P-CH DUAL 12V SSOT-6
FDC6320C MOSFET N/P-CH DUAL 25V SSOT6
FDC6321C MOSFET N/P-CH DUAL 25V SSOT-6
FDC6327C MOSFET N/P-CH DUAL 20V SSOT-6
相关代理商/技术参数
FDC6304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6304P_Q 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6305 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6305N 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6305N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
FDC6305N_Q 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6306P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube